PURPOSE: To prevent the deterioration of characteristics of a MISFET transistor even when excessive dynamic quantity works.
CONSTITUTION: A movable part 7 of beam structure is arranged on the upper part of a silicon substrate 1, and a movable gate electrode part is provided on a part of the movable part 7. The movable part 7 displaces in association with an acceleration action. A fixed electrode (source-drain part) is formed on the silicon substrate 1 by diffusing impurities, a flowing current changes by the change of the relative position between the fixed electrode and the movable gate electrode part caused by the accelerated function. A spring part 19, to be used to control the range of movement of the beam structure, is protruding from the side of the silicon substrate 1 in such a manner that is approaches the movable part 7, an interval narrower than the interval between the silicon substrate 1 and the movable gate electrode part is formed, and when the movable part 7 is deformed by excessive force the deformation of the movable part is regulated part by the restoring force of deformation.
| JPS6011480 | [Title of the device] Pressure sensing machine |
| WO/2023/170213 | PRESSURE MEASURING CELL |
| JPH08128908 | PRESSURE SENSOR |
TAKEUCHI YUKIHIRO
NARA KENICHI
KIMURA YUJI
