To provide a semiconductor element manufacturing method which enables uniform bonding or a semiconductor wafer and a support substrate at a low temperature with less voids in junction of a semiconductor layer and a thermally-conductive support substrate in manufacturing of a semiconductor element such as an LED element which uses the thermally-conductive support substrate, and which prevents warpage or breakage of the semiconductor wafer and the support substrate caused by junction processing and subsequent removal of a growth substrate, thereby achieving excellent productivity, yield and reliability.
A semiconductor element manufacturing method comprises: a step of forming on a first substrate 11, an element structure layer 13 including semiconductor layers; a step of forming a first junction layer 15 on the element structure; a step of forming a second junction layer 23 on a second substrate 21; and a step of thermocompression bonding the first junction layer and the second junction layer in an opposed manner. One of the first junction layer and the second junction layer is a layer composed of Au and the other is a layer composed of AuSn. The layer composed of AuSn includes a surface layer in which a content of Sn is within a range of not less than 85 wt% and not more than 95 wt%.
MIYAJI MAMORU
SAITO TATSUMA
AKAGI TAKANOBU
| JP2002373960A | 2002-12-26 | |||
| JP2011138839A | 2011-07-14 | |||
| JP2003200289A | 2003-07-15 |
| WO2005020315A1 | 2005-03-03 | |||
| US20120007117A1 | 2012-01-12 |
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