Title:
SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2010232362
Kind Code:
A
Abstract:
To provide a semiconductor element capable of adjusting a threshold voltage by a channel length and a doping condition of an extension source region and a drain region.
The semiconductor element of an SOI structure includes a high Vt element formed on the semiconductor layer of the SOI structure and a low Vt element formed on the semiconductor layer and having a threshold voltage lower than that of the high Vt element with the high Vt and low Vt elements formed as MOSFET elements, and a channel which is a part between the extension source region and the extension drain region where the channel length of the high Vt element is longer than that of the low Vt element.
COPYRIGHT: (C)2011,JPO&INPIT
Inventors:
ANIL KUMAR
Application Number:
JP2009077314A
Publication Date:
October 14, 2010
Filing Date:
March 26, 2009
Export Citation:
Assignee:
OKI SEMICONDUCTOR CO LTD
International Classes:
H01L29/786; H01L21/336; H01L21/8234; H01L27/08; H01L27/088
Domestic Patent References:
| JPH11112000A | 1999-04-23 | |||
| JP2006332400A | 2006-12-07 | |||
| JP2006270945A | 2006-10-05 | |||
| JP2005259780A | 2005-09-22 | |||
| JP2005072461A | 2005-03-17 | |||
| JP2007200976A | 2007-08-09 | |||
| JP2007103753A | 2007-04-19 | |||
| JP2005259889A | 2005-09-22 | |||
| JP2006093678A | 2006-04-06 | |||
| JP2002314091A | 2002-10-25 | |||
| JP2003100902A | 2003-04-04 |
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazunori
Katsuichi Nishimoto
Hiroshi Fukuda
Kato Kazunori
Katsuichi Nishimoto
Hiroshi Fukuda