Title:
SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP3808686
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To realize a semiconductor element having simultaneously a high current gain and a low ON voltage.
SOLUTION: The semiconductor element has a high-resistance base layer 1, a first-conduction type drain layer 2 provided on the surface of the high- resistance base layer 1, a second-conduction type base layer 3 provided selectively on the different surface region of the high-resistance base layer 1 from the one whereon the first-conduction type drain layer 2 is provided, a first- conduction type source layer 4 provided selectively on the surface of the second- conduction type base layer 3, a second-conduction type semiconductor region 5 provided separately on the surface of the high-resistance base layer 1 from the second-conduction type base layer 3 which is connected electrically with a gate terminal, and a diode 13 interposed between the second-conduction type base layer 3 and the gate terminal in whose forward direction second-conduction type carriers flow from the second-conduction type base layer 3 to the gate terminal.
Inventors:
Shoichi Yamaguchi
Application Number:
JP2000096443A
Publication Date:
August 16, 2006
Filing Date:
March 31, 2000
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L29/68; H01L21/337; H01L21/8222; H01L27/06; H01L29/739; H01L29/78; H01L29/808; (IPC1-7): H01L29/68; H01L21/8222; H01L27/06; H01L29/78; H01L21/337; H01L29/808
Attorney, Agent or Firm:
Hiroshi Horiguchi