SEMICONDUCTOR ELEMENT

Title:

SEMICONDUCTOR ELEMENT

Document Type and Number:

Japanese Patent JPH02271638

Kind Code:

A

Abstract:

PURPOSE: To increase carrier concentration of a two-dimensional electron gas and improve mobility and saturation rate of the carrier by providing a layer where a mixed crystal ratio y of In changes continuously from 0 to y between a GaAs layer and an InyGa1-yAs layer.

CONSTITUTION: A layer 4 called a graded layer where the mixed crystal ratio of In changes from 0 to y continuously from a GaAs layer 3 toward the InyGa1-yAs layer 5 is provided between the undoped GaAs layer 3 and the undoped InyGa1-yAs layer 5 to relax distortion due to difference in lattice constant between GaAs and InGaAs. As a result, since the undoped InyGa1-yAs layer 5 is relaxed due to presence of the graded layer 4, the thickness may be increased by that amount and the mixed crystal ratio y can be increased. Thus, the carrier concentration becomes larger and the mobility and saturation rate of carrier can be improved.

Inventors:

KUDO SUMIHISA

Application Number:

JP9420589A

Publication Date:

November 06, 1990

Filing Date:

April 13, 1989

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

H01L29/812; H01L21/20; H01L21/203; H01L21/338; H01L29/778; (IPC1-7): H01L21/20; H01L21/203; H01L21/338; H01L29/812

Attorney, Agent or Firm:

Satoru Akita (1 person outside)

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