Title:
半導体素子及びそのパターン形成方法
Document Type and Number:
Japanese Patent JP5677653
Kind Code:
B2
Abstract:
Semiconductor devices and methods of forming semiconductor devices are provided in which a plurality of patterns are simultaneously formed to have different widths and the pattern densities of some regions are increased using double patterning. The semiconductor device includes a plurality of conductive lines each including a first line portion and a second line portion, where the first line portion extends on a substrate in a first direction, the second line portion extends from one end of the first line portion in a second direction, and the first direction is different from the second direction; a plurality of contact pads each of which is connected with a respective conductive line of the plurality of conductive lines via the second line portion of the corresponding conductive line; and a plurality of dummy conductive lines each including a first dummy portion extending from a respective contact pad of the plurality of contact pads, in parallel with the corresponding second line portion in the second direction.
Inventors:
朴 榮 周
閔 在 豪
金 明 哲
金 東 燦
沈 載 煌
閔 在 豪
金 明 哲
金 東 燦
沈 載 煌
Application Number:
JP2009291875A
Publication Date:
February 25, 2015
Filing Date:
December 24, 2009
Export Citation:
Assignee:
三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ．
International Classes:
H01L21/3213; H01L21/027; H01L21/3065; H01L21/768
Attorney, Agent or Firm:
Patent business corporation symbiosis international patent firm