PURPOSE: To surely prevent a II-VI compound semiconductor from becoming uneven during epitaxial growth by selecting the feed ratio of the group VI element to the group II element.
CONSTITUTION: The molecular beam epitaxy method or metal organic chemical vapor deposition method is applied to successively epitaxially grow a buffer layer 2, first clad layer 3 of Cl doped ZnMgSSe, first guide layer 4, active layer 5 of ZnCdSe, second guide layer 6, second clad layer 7 of N-doped ZnMbSSe, cap layer 8, quantum well structure 9 and contact layer 10 on a wafer at its temp. of 250-300°C. In particular, as for the epitaxy of the layers 3, 4, 5, 6 and 7, the feed ratio of the group VI element to the group II element from their respective molecular beam sources to the substrate 1 is set to 1.3:1-2.5:1.
NAKANO KAZUSHI
ITO SATORU
MINATOYA RIKAKO
