Title:
半導体装置、電力変換装置
Document Type and Number:
Japanese Patent JP6987213
Kind Code:
B2
Abstract:
Even when a stress is applied due to energization or switching operation, a connection state of electrode layers can be appropriately maintained. A semiconductor device includes a semiconductor layer of first conductivity type, an upper surface structure formed on a surface layer of the semiconductor layer, and an upper surface electrode formed over the upper surface structure. The upper surface electrode includes a first electrode formed on an upper surface of the semiconductor layer, and a second electrode formed over an upper surface of the first electrode. The first concave portion is formed on the upper surface of the first electrode. A side surface of the first concave portion has a tapered shape. The second electrode is formed over the upper surface of the first electrode including an inside of the first concave portion.
Inventors:
Kazunari Nakata
Kensuke Taguchi
Kensuke Taguchi
Application Number:
JP2020505717A
Publication Date:
December 22, 2021
Filing Date:
February 19, 2019
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L29/78; H01L21/28; H01L21/336; H01L29/12; H01L29/41; H01L29/739
Domestic Patent References:
| JP2005347313A | ||||
| JP2017118060A | ||||
| JP2017079239A | ||||
| JP2011003726A | ||||
| JP2015213163A | ||||
| JP2009141230A |
Foreign References:
| WO2017169086A1 |
Attorney, Agent or Firm:
Yoshitake Hidetoshi
Takahiro Arita
Takahiro Arita