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Title:
SEMICONDUCTOR FILM AND MANUFACTURING METHOD THEREFOR, PHOTOELECTRIC CONVERSION ELEMENT, SOLID-STATE IMAGING ELEMENT AND ELECTRONIC DEVICE
Document Type and Number:
Japanese Patent JP2022095628
Kind Code:
A
Abstract:
To provide a semiconductor film with which it is possible to realize further improvement of photoelectric conversion efficiency.SOLUTION: Provided is a semiconductor film including a first semiconductor nanoparticle and a compound represented by general formula (1), the compound represented by general formula (1) being coordinated to the first semiconductor nanoparticle, including a second semiconductor nanoparticle and a compound represented by general formula (2), the compound represented by general formula (2) being coordinated to the second semiconductor nanoparticle. (X represents -SH, -COOH, -NH2, -PO(OH)2 or -SO2(OH), A1 represents -S, -COO, -PO(OH)O or -SO2(O), and n represents an integer 1-3. B1 represents Li, Na or K. B2 represents an imidazolium compound, a pyridinium compound, a phosphonium compound, an ammonium compound or sulfonium compound.)SELECTED DRAWING: None

Inventors:
TAKIZAWA SHUICHI
SHIOMI HARUNORI
Application Number:
JP2022036056A
Publication Date:
June 28, 2022
Filing Date:
March 09, 2022
Export Citation:
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Assignee:
SONY GROUP CORP
International Classes:
H01L31/10; B82Y20/00; B82Y40/00; H01L27/146; H01L27/30
Domestic Patent References:
JP2011528624A2011-11-24
JP2015128105A2015-07-09
JP2006245285A2006-09-14
JP2016513361A2016-05-12
JP2015176956A2015-10-05
JP2014143397A2014-08-07
Foreign References:
US20150214400A12015-07-30
US20110073835A12011-03-31
US20070215856A12007-09-20
Attorney, Agent or Firm:
Kaoru Watanabe