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Patent Searching and Data


Title:
SEMICONDUCTOR GAS SENSOR
Document Type and Number:
Japanese Patent JPS5830648
Kind Code:
A
Abstract:

PURPOSE: To eliminate the influence of alcohol vapor, by combining in series a P type semiconductor material, which increases an electric conductivity through contact with alcohol vapor, and an N type semiconductor material which reduces an electric conductivity through contact with town gas, propane gas.

CONSTITUTION: By the use of paste using LaNiO2 powder, which is increased in electric conductivity through contact with alcohol and does not react to town gas, propane gas, such as H2, CH4, C3H3, i-C4H10, at all, and paste using SnO3 powder which is reduced in resistance value by alcohol, film sensors, in which LaNiO2 3 and SnO2 3' are placed on the same chip by a thick film technic, are connected in series through a Pt intermediate conductor 10 to detect gas between electrodes 2, 2. This constitution permits the prevention of the occurrence of an erroneous detection due to alcohol.


Inventors:
NORO TAKANOBU
ARIMA HIDEO
IWANAGA SHIYOUICHI
KANEYASU AKIYOSHI
Application Number:
JP12781281A
Publication Date:
February 23, 1983
Filing Date:
August 17, 1981
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
G01N27/12; G01N33/00; (IPC1-7): G01N27/12
Attorney, Agent or Firm:
Toshiyuki Usuda