Title:
半導体インゴット製造装置及び半導体インゴットの製造方法
Document Type and Number:
Japanese Patent JP4845480
Kind Code:
B2
Abstract:
To provide a high quality semiconductor ingot wherein the mixing amount of foreign matter is low by suppressing the contact between a semiconductor melt and the foreign matter in an apparatus in a manufacturing process.
This apparatus for manufacturing the semiconductor ingot has a crucible 1 having a liquid discharge port 3 for discharging the semiconductor melt 10 at its bottom part and a casting mold 7 having an opening part communicated through the liquid discharge port 3 and a communication tube 5.
COPYRIGHT: (C)2007,JPO&INPIT
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Inventors:
Yamatani Muneyoshi
Application Number:
JP2005314113A
Publication Date:
December 28, 2011
Filing Date:
October 28, 2005
Export Citation:
Assignee:
Kyocera Corporation
International Classes:
C01B33/02; B22D7/06; B22D7/12; H01L31/04
Domestic Patent References:
| JP58156520A | ||||
| JP2005069532A | ||||
| JP7138011A | ||||
| JP2006199511A |