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Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND NON-CONTACT ELECTRONIC DEVICE
Document Type and Number:
Japanese Patent JP2003319574
Kind Code:
A
Abstract:

To control the voltage, generated in the antenna terminal of a non- contact IC card, prevented from exceeding the breakdown voltage of an element.

A first rectifier transistor connecting a gate and a drain through a first resistor means to make a rectified current flow between first/second input terminals, a first voltage control current source formed with a current responding to the control voltage, a first voltage detection means formed with the control voltage so as to make rectified voltage obtained in a source side of the first rectifier transistor agree with the prescribed reference voltage, and a first one-way directional element allowing a current corresponding to the rectified current to flow between the first input terminal and a first output terminal out-putting the rectified voltage, are provided, the resistance of the first resistor means is set so as to prevent the voltage generated between the first/second input terminals from exceeding the breakdown voltage of an element constituting the circuit.


Inventors:
WATANABE KAZUKI
KUBOTA MASARU
MATSUSHITA KAZUHIRO
KINOTA HAJIME
Application Number:
JP2002123390A
Publication Date:
November 07, 2003
Filing Date:
April 25, 2002
Export Citation:
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Assignee:
HITACHI LTD
HITACHI ULSI SYS CO LTD
International Classes:
H02H7/20; H02H9/04; H02J50/00; H02J50/10; H04B5/02; G06K19/07; (IPC1-7): H02J17/00; G06K19/07; H02H7/20; H02H9/04; H04B5/02
Attorney, Agent or Firm:
Sakuta Yasuo