Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Document Type and Number:
Japanese Patent JP2009060137
Kind Code:
A
Abstract:
To provide a method for simultaneously forming regular window openings and self-aligned contact window openings.
A semiconductor integrated circuit device includes a silicon substrate having a field oxide region and an active region spaced apart from the field oxide region, first/second self-aligned contacts, which are respectively associated with the field oxide region and the active region while respectively formed in the first/second self-aligned contact window openings, a dummy polysilicon landing pad formed on the field oxide region and formed under the first self-aligned contact window opening, and an operative polysilicon landing pad formed on the dummy polysilicon landing pad.
Inventors:
SUNMUU CHOI
Application Number:
JP2008290462A
Publication Date:
March 19, 2009
Filing Date:
November 13, 2008
Export Citation:
Assignee:
LUCENT TECHNOLOGIES INC
International Classes:
H01L21/3205; H01L21/8247; H01L21/60; H01L21/768; H01L23/52; H01L27/10; H01L27/105; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
| JPH09199589A | 1997-07-31 | |||
| JPH05218211A | 1993-08-27 | |||
| JPH06224196A | 1994-08-12 | |||
| JPH098008A | 1997-01-10 | |||
| JPH1041482A | 1998-02-13 | |||
| JPS62122238A | 1987-06-03 |
Attorney, Agent or Firm:
Masao Okabe
Nobuaki Kato
Shinichi Usui
Takao Ochi
Asahi Shinmitsu
Nobuaki Kato
Shinichi Usui
Takao Ochi
Asahi Shinmitsu