Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Document Type and Number:
Japanese Patent JPS5438779
Kind Code:
A
Abstract:
PURPOSE: To reduce the parasitic effect of parasitic PNP transistors by providing a high concentration N type region or second P type region in a semiconductor integrated circuit having a Schottky barrier diode and a P type region within the insulated N type region.
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Inventors:
KAMIBAYASHI KAZUTOSHI
Application Number:
JP10559777A
Publication Date:
March 23, 1979
Filing Date:
September 01, 1977
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L27/06; H01L27/07; (IPC1-7): H01L27/04