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Title:
SEMICONDUCTOR INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JPH02260914
Kind Code:
A
Abstract:

PURPOSE: To always execute an integral control action without being affected due to a temperature change by adding the other diffusion resistance which compensates the charge current of a capacitor that executes charge and discharge.

CONSTITUTION: The collector and the base of a transistor 15 are commonly connected and the common connection point is connected to the other end of the diffusion resistance 13 whose one end is released. The diffusion resistance 13 has the total areas of diffusion resistances 2 and 7. When a semiconductor integrated circuit comes to a high temperature state, a leak current flows to a ground-side from the diffusion resistances 2 and 7, and a constant current I3 which charges the capacitor 10 reduces. The leak current occurs in the diffusion resistance 13 at that time. A current I1 which is the same as the leak current flows from a power source E to the transistor 15 in a current mirror circuit CM, and a current I2 corresponding to said current I1 flows in a transistor 14, whereby the reduced charge current is supplied to the capacitor 10.


Inventors:
NAKANO TOSHIYA
Application Number:
JP8186289A
Publication Date:
October 23, 1990
Filing Date:
March 31, 1989
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L27/04; H01L21/822; H03K4/50; H03K4/501; (IPC1-7): H01L27/04; H03K4/50
Domestic Patent References:
JPS5954315A1984-03-29
Attorney, Agent or Firm:
Mamoru Takada (1 person outside)



 
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