Title:
SEMICONDUCTOR INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JPS6048520
Kind Code:
A
Abstract:
PURPOSE:To obtain an integrated circuit which operates stably by providing a voltage circuit which generates a DC voltage having a high potential than a source voltage in a semiconductor integrated circuit. CONSTITUTION:The semiconductor integrated circuit generates internally the DC voltage V2 having a higher potential than the source voltage V1 supplied externally. The driver circuit DVR of this circuit receives an activation signal phi1 to boost the high potential of an internally generated signal N1 above the source voltage V1, and the 1st and the 2nd transistor (TR) Q1 and Q2 generate a voltage V2. Consequently, when a recharge signal phi2 is impressed to the electrode of capacity C1, the potential of a node N2 is further boosted by the amplitude of the recharge signal phi2, and the 2nd TRQ2 turns on to supply the high potential of the internally generated signal N1 from the DC voltage V2 and hold it.
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Inventors:
MASUKO KOUICHIROU
Application Number:
JP15670083A
Publication Date:
March 16, 1985
Filing Date:
August 26, 1983
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G05F3/24; H02M3/07; (IPC1-7): G05F1/56
Attorney, Agent or Firm:
Masuo Oiwa