PURPOSE: To enable a semiconductor element capable of operating as a heterojunction bipolar transistor by one time crystal growth or operating as an LED or LD to be manufactured.

CONSTITUTION: The title semiconductor laminated structure is composed of a laminated structure comprising an n type InP emitter 1, a P+ type GaAsP base 2, the first P- type InGaAsP collector layer 3, a non-doped InGaAs active layer 4 and the second n type InP collector layer 5 so that an active layer non-doped with impurities may be formed in the collector layer by one time growth to avoid the introduction of the impurities into active layer in the element manufacturing process, and thereby the repeated growth exceeding two times may be eliminated.