Title:
SEMICONDUCTOR LASER DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3213428
Kind Code:
B2
Abstract:
PURPOSE: To provide a semiconductor laser device which is capable of reduction in oscillation threshold current and manufacture of the device.
CONSTITUTION: A resistance of a second clad layer 5 is enhanced by doping of low level. Next, in a region 13 being opposite to a cutout part 10 of a current block layer 6, impurities are diffused from third clad layer 7 into the second clad layer 5. This impurity diffusion diminishes a resistance of the second clad layer 5 in the region 13 opposite to the cutout part. That restrains a current from expanding into a region which is not opposite to the cutout part in the second clad layer 5 and also restrains reactive current, thereby attaining operation with low threshold current.
Inventors:
Naohiro Suyama
Akihiro Matsumoto
Ken Obayashi
Akihiro Matsumoto
Ken Obayashi
Application Number:
JP3313093A
Publication Date:
October 02, 2001
Filing Date:
February 23, 1993
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01S5/00; H01S5/223; (IPC1-7): H01S5/223
Domestic Patent References:
| JP63192287A | ||||
| JP2194684A | ||||
| JP2194681A | ||||
| JP1138775A |
Attorney, Agent or Firm:
Aoyama Ryo (1 person outside)
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