Title:
SEMICONDUCTOR LASER DEVICE
Document Type and Number:
Japanese Patent JP3911002
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor laser device that suppresses an oscillation of Fabry Perot Mode, and exhibits a big submode suppression rate or SMSR, and in that a uniformity of bonding factor is excellent, and product yield is high.
SOLUTION: A DFB laser device 10, an embedding hetero type having an oscillation wavelength of 1,550 nm, comprises, on an n-InP substrate 12, an n-InP buffer layer 14, an active layer 16, a p-InP spacer layer 18, a grating 20 consisting of GaInAsP layer, and a lamination structure of p-InP first cladding layer 22 in which a grating is embedded. A peak wavelength λmax of optical profit distribution of the active layer is about 1,530 nm, and a band gap wavelength of the grating is roughly 1,510 nm. By forming the grating with GaInAsP having a λg of about 1,510 nm, absorption hardly occurs with respect to a wavelength near an oscillation wavelength of 1,550 nm. An absorption coefficient with respect to the peak wavelength of the optical profit distribution of the active layer is bigger than an absorption coefficient with respect to the oscillation wavelength.
Inventors:
Funaki Bridge Masaki
Ryosuke Yatsu
Akihiko Kasukawa
Ryosuke Yatsu
Akihiko Kasukawa
Application Number:
JP2006158844A
Publication Date:
May 09, 2007
Filing Date:
June 07, 2006
Export Citation:
Assignee:
THE FURUKAW ELECTRIC CO.,LTD.
International Classes:
H01S5/12; H01S5/227; H01S5/347
Domestic Patent References:
| JP2001320125A | ||||
| JP8274406A |
Attorney, Agent or Firm:
Kiyoshi Inagaki