SEMICONDUCTOR LASER DEVICE

Japanese Patent JPH01199487

A

PURPOSE:To obtain a semiconductor laser device capable of varying large in a wavelength by a method wherein a feedback region provided with an optical waveguide region which guides the light from an active layer and a perturvation part with a ununiform period distribution, and a means which changes the strength of an optical coupling of the light which propagates in the feedback region with a part of the perturvation part are provided. CONSTITUTION:A substrate 101, an active region 112, formed on the substrate 101, provided with an active layer 103 which emits light by injected carriers, a feedback region 113 provided with an optical waveguide region 105 which guides the light from the active layer 103 and a perturvation part 111 with a ununiform period distribution, and a means 107 which changes the strength of an optical coupling of the light that propagates in the feedback region 113 with a part of the perturvation part 11 are provided. For instance, the optical waveguide region 105 is formed of a structure comparatively large in a refractive index, and the perturvation part 111 is formed into a diffraction grating which changes gradually in periods. And, two or more isolating electrodes 107 are provided as a means which changes the strength of an optical coupling of the light that propagates inside the feedback region 113 with a partial region of the perturvation part 111.

OKAI MAKOTO
UOMI KAZUHISA
TSUJI SHINJI
SAKANO SHINJI
KAYANO NAOKI

JP24735088A

August 10, 1989

October 03, 1988

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HITACHI LTD

H01S5/00; H01S3/08; H01S3/082; H01S5/042; H01S5/0625; H01S5/10; H01S5/12; H01S5/125; H01S5/40; (IPC1-7): H01S3/18

JPS6179283A	1986-04-22
JPS6154690A	1986-03-18
JPS61255087A	1986-11-12
JPS61255085A	1986-11-12

Akio Takahashi

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