半導体レーザー素子とその製造方法

Title:

半導体レーザー素子とその製造方法

Document Type and Number:

Japanese Patent JP7205820

Kind Code:

B2

Abstract:

To provide a semiconductor laser element which is improved in light confinement coefficient to have higher efficiency, and a method of manufacturing the same.SOLUTION: A semiconductor laser element 100 has a substrate, a prismatic semiconductor 130 in a hexagonal prism shape on the substrate, and a buried semiconductor layer 140 covering the prismatic semiconductor 130. The prismatic semiconductor 130 has an active layer in a hexagonal cylinder shape. The active layer has a pair of long-sized parts 132a, 132b which face each other, and two pairs of short-side parts 132c, 132d, and 132e, 132f which face each other.SELECTED DRAWING: Figure 4

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Inventors:

Masaya Oya
Satoshi Kamiyama
Tetsuya Takeuchi
Motoaki Iwatani
Red saki

Application Number:

JP2018148755A

Publication Date:

January 17, 2023

Filing Date:

August 07, 2018

Export Citation:

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Assignee:

Toyoda Gosei Co., Ltd.
School corporation Meijo University

International Classes:

H01S5/30; H01S5/10

Domestic Patent References:

JP10270801A
JP8018159A
JP2002100805A
JP2016021556A
JP2016518703A

Foreign References:

WO1997011518A1
US20160064607
US20070085087
CN1447990A
US6377596
US20160013365
CN105280761A

Attorney, Agent or Firm:

Patent Attorney Corporation Aichi International Patent Office
Fujitani Osamu
Akinori Isshiki
Tomohiro Kakutani

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