To provide a semiconductor laser element which enhances heat dissipation characteristics and reliability (lifetime), simplifies its manufacturing process, and improves manufacturing yield.
This semiconductor laser element comprises a light emitting layer 4 formed on an n-type GaAs substrate 1; a protruding mesa-shaped (trapezoid-shaped) ridge part 12 and dummy ridge parts 13, which are formed on the upper face of a p-type first cladding layer 5 with a prescribed spacing and are constituted by a p-type second cladding layer 6, an intermediate layer 7, and a contact layer 8; a current blocking layer 9 formed so as to cover the side faces of the ridge part 12 and consisting of a stacking layer of a Se-doped n-type AlInP layer and an n-type GaAs layer; and a first p-side electrode 10 formed so as to contact the upper face of the ridge part 12.
HIROYAMA RYOJI
INOUE DAIJIRO
OKAMOTO SHIGEYUKI
MATSUOKA KENSHO
KAMEYAMA SHINGO
OTA KIYOSHI
| JP2003086877A | 2003-03-20 | |||
| JP2002171021A | 2002-06-14 | |||
| JP2003031905A | 2003-01-31 | |||
| JPH07288321A | 1995-10-31 |
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