Title:
SEMICONDUCTOR LASER GENERATING SECOND HIGH HARMONIC LIGHT BY NONLINEAR CRYSTAL IN LASER CAVITY
Document Type and Number:
Japanese Patent JPH07226567
Kind Code:
A
Abstract:
PURPOSE: To provide a semiconductor laser which can emit a blue beam, is compact in size, and has high efficiency. CONSTITUTION: A 1st reflector 13 made of GaAs or AlGaAs, an optical amplifier 15 including an active layer 23 made of As compound and an adhesive layer 17 made of In or InGaP are respectively built up by epitaxial growth on a GaAs substrate 11. Then, a 2nd reflector 21, made of AlP or AlGaP and a nonlinear crystal layer 19 made of AlGaP, is respectively built up by epitaxial growth on a GaP substrate 41. The GaP substrate 41 is turned upside down, and the nonlinear crystal layer 19 is pressed against the adhesive layer 17 and a temperature is elevated to bond both the substrates 21 and 41 to each other by the melted adhesive layer 17. Therefore, the reflector 21 reflects the fundamental wave of this surface emission laser but transmits its second harmonic light. As a result, by the fundamental wave which is propagated back and forth in the nonlinear crystal layer 19, a blue second harmonic light can be generated efficiently.
Inventors:
RON YAN
RAJIEEBU RAMU
RAJIEEBU RAMU
Application Number:
JP28814294A
Publication Date:
August 22, 1995
Filing Date:
November 22, 1994
Export Citation:
Assignee:
HEWLETT PACKARD CO
International Classes:
H01S3/094; H01S3/109; H01S5/00; G02F1/37; H01S5/183; H01S5/02; H01S5/06; (IPC1-7): H01S3/18; G02F1/37; H01S3/094; H01S3/109
Attorney, Agent or Firm:
Kaoru Furuya (2 outside)
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