Title:
SEMICONDUCTOR LASER AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3235588
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide the semiconductor laser whose operation voltage is small, whose lateral mode is stable and which has high output.
SOLUTION: A boundary face on an optical waveguide between a first conductivity-type current block layer 16 and a second conductivity-type embedded layer 17 are installed on a (111)B face facet of an optical waveguide side. Thus, a role of widening an effective current path without widening the width of an active layer 13 is displayed, and a rate that the bearing of the crystal growing face of the second conductivity-type buried layer 17 directly above the optical waveguide applied to the effective current path is a (100) face whose doping efficiency is satisfactory becomes more frequent in the growing process of the second conductivity-type embedded layer 17. Thus, effect that element resistance can be reduced can also be obtained since the doping efficiency of the second conductivity-type embedded layer 17 applied to the effective current path.
Inventors:
Tetsuya Hosoda
Application Number:
JP6943799A
Publication Date:
December 04, 2001
Filing Date:
March 16, 1999
Export Citation:
Assignee:
NEC
International Classes:
H01S5/00; H01S5/227; H01S5/343; (IPC1-7): H01S5/227
Domestic Patent References:
| JP5235477A | ||||
| JP11266052A | ||||
| JP2000138418A |
Attorney, Agent or Firm:
Yoshiyuki Iwasa