PURPOSE: To obtain a semiconductor laser having a quantum thin wire or a quantum case with the excellent quantum effect by providing the first specified crystal face, wherein an active layer arranged on the semiconductor layer becomes the quantum thin wire, and the second specified crystal faces, which are arranged on both sides, on the first conductivity type semiconductor layer.

CONSTITUTION: A first-conductivity-type semiconductor layer 3 has the first crystal face, whose inclination with respect to a {100} face is the specified angle or less, and the second crystal faces, which are arrange on both sides and whose slant angles with respect to the {100} face are larger than the slant angle of the first crystal face with respect to the {100} face. When an active layer 4 comprising GaInP or AlGaInP is grown on the {100} face on the first conductivity-type semiconductor layer 3, the crystal is grown under the state, wherein atoms constituting the crystal are regularly aligned in the ordering state. When the active layer is grown on the surface having the inclination with respect to the {100} face, the crystal is grown in the disordering state, wherein the regularity of the alignment of the atoms is disturbed.