To provide a semiconductor laser capable of enhancing heat dissipation of an active layer while preventing light output from decreasing.
A low-refractive-index layer 21 comprising an SiO2 layer having a lower refractive index than that of a contact layer 19 is provided right above a region A wherein a light emission region 16 is provided. Consequently, the low-refractive-index layer 21 serves to confine light emitted from the light emission region 16, and the contact layer 19 becomes harder to operate as an absorbing layer for the light emitted from the light emission region 16. Therefore, loss of light output can be reduced by the contact layer 19 to prevent the light output from decreasing. Further, the contact layer 19 is hard to operate as the absorption layer for light, thus a second conductivity type clad layer 17 is reducible in thickness. Consequently, heat dissipation of heat generated from the light emission region 16 can be enhanced.
FURUKAWA MASAHITO
Shiro Terasaki
Yoshiki Kuroki
Ichira Kondo
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