Title:
SEMICONDUCTOR LASER
Document Type and Number:
Japanese Patent JP3116675
Kind Code:
B2
Abstract:
PURPOSE: To enable continuous oscillation at high temperatures including a room temperature by a method wherein a parameter representing a rise of a threshold current due to a rise voltage and a parameter representing a rise of the threshold current due to a series resistance component are made in a specified area, in a II-VI compound semiconductor laser making pulse oscillation.
CONSTITUTION: This semiconductor laser has a first clad layer 3 of a first conductivity type and an active layer 5 and a second clad layer 7 of a second conductivity type laminated sequentially on the first clad layer, and all of these layers are constituted of II-VI compound semiconductors. This laser makes pulse oscillation in characteristics of a threshold current Ith, a rise voltage Vth of a diode, a differential resistance Rs after the rise a thermal resistance Rt and a characteristic temperature To. When two amounts α and β are defined by α≡(Rt/To)IthVth and β≡(Rt/To)RsI2th herein, (α, β) are made in an area surrounded by a straight line α=o, a straight line β=o and a curve (2lnt-1)/t, (1-lnt)/t2 wherein (t) is made a parameter.
Inventors:
Shoichi Ukita
Akira Ishibashi
Akira Ishibashi
Application Number:
JP20591993A
Publication Date:
December 11, 2000
Filing Date:
July 28, 1993
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01S5/00; H01S5/024; H01S5/042; H01S5/062; H01S5/323; H01S5/327; H01S5/343; H01S5/347; H01S5/028; (IPC1-7): H01S5/327; H01S5/323
Domestic Patent References:
| JP5102612A | ||||
| JP4242985A | ||||
| JP2288388A | ||||
| JP478472A | ||||
| JP5093786A |
Other References:
【文献】Jpn.J.Appl.Phys.Part2 32[1A/B](1993)p.L8-L11
【文献】「ワイドギャップ半導体発光材料 調査研究報告書(▲I▼)」,社団法人日本電子工業振興協会,(平成5年3月)
【文献】「ワイドギャップ半導体発光材料 調査研究報告書(▲I▼)」,社団法人日本電子工業振興協会,(平成5年3月)
Attorney, Agent or Firm:
Masatomo Sugiura