PURPOSE: To stabilize a lateral mode and an axial mode of a semiconductor laser even in a narrow stripe laser by providing differences of light waveguide gain, loss and refractive indexes as compared with the periphery at the section for guiding the light, and forming an opposite conductive type part in a substrate side.
CONSTITUTION: The first conductive type anode region 1 made of a high impurity density region and the second conductive type channel region 22 which has opposite conductive type to the first conductive type made of a high resistance region provided adjacent to an active layer 3 having large refractive index and small forbidden band width as compared with the periphery provided adjacent to an anode region 9 are provided. The second conductive type region 2 made of a high impurity density region and a gate region 6 made of the first conductive type high impurity density region provided to surround at least part of the channel region are provided at one end of the channel region. The second conductive type region is formed between the anode and the active layer out of a laser light emitting region.
OOMI TADAHIRO
MORISHITA MASAKAZU
| JPS56152289A | 1981-11-25 | |||
| JPS5710992A | 1982-01-20 |