PURPOSE: To obtain a high output operation of a semiconductor laser with high reliability by forming a mesa stripe-like structure on a substrate to increase the thickness of a current narrowing layer without altering the groove shape for narrowing a current.
CONSTITUTION: An opposite conductivity type layer to one conductivity type having a groove 9 of depth arriving at a stripe-like mesa 1a is formed on one conductivity type semiconductor substrate formed with the mesa 1a, a flat surface layer is formed except the groove 9, and a double hetero structure is formed on the layer having the groove 9. For example, the height of the mesa 1a is 1.5μm, the thickness d2 of a current narrowing layer 2 on the mesa 1a is 0.5μm, and the thickness (d1+d2) of the layer 2 except the mesa 1a is 2.0μm. The density of an impurity Te in the layer 2 is 3.0 × 1018cm-3. With this configuration, the current constriction layer is thickly formed without altering the groove shape for constricting a current to completely constrict the current even in low Te density to obtain a high output operation with high reliability.
ITO KUNIO
KUME MASAHIRO
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