Title:
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME
Document Type and Number:
Japanese Patent JP3264179
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To fabricate a ridge waveguide semiconductor laser by a simple process.
SOLUTION: On an n-Inp substrate 101, an n-InGaAsP waveguide layer 102, a multi-quantum well active layer 103 constructed by an InGaAsP well layer and an InGaAsP barrier layer, a p-InGaAsP waveguide layer 104, and a p-InP cap layer 105 are sequentially epitaxial grown by using the metal organic vapor phase epitaxial growth method, thereby forming a semiconductor multilayer structure. An SiO2 film is deposited on the p-InP cap layer 105 by the CVD and is patterned. An insulating film mask 106 is formed by wet etching. On the n-InP substrate 101 provided with the insulating film mask 106, a p-InP cladding layer 107 and a p-InGaAs contact layer 108 are sequentially epitaxial grown. Further, the p-InP cladding layer 107 and the p-InGaAs contact layer 108 are grown only in a region of the opening part of the mask. Consequently, the ridge waveguide semiconductor laser is automatically formed. In the method of fabricating the laser, since the width of the ridge can be accurately specified, ridge formation with high uniformity can be realized.
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Inventors:
Yuichi Inaba
Masato Ishino
Nobuyuki Ohtsuka
Masato Ishino
Nobuyuki Ohtsuka
Application Number:
JP18032596A
Publication Date:
March 11, 2002
Filing Date:
July 10, 1996
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01S5/00; H01S5/026; (IPC1-7): H01S5/026
Domestic Patent References:
| JP6125132A | ||||
| JP6314657A | ||||
| JP521904A | ||||
| JP7174931A | ||||
| JP9260782A | ||||
| JP9199785A | ||||
| JP832169A | ||||
| JP7221387A | ||||
| JP9289358A | ||||
| JP9186391A | ||||
| JP6260727A |
Other References:
１９９７年電子情報通信学会エレクトロニクスソサイエティ大会講演論文集１，Ｃ−３−１２９，ｐ．２３８
Attorney, Agent or Firm:
Fumio Iwahashi (2 others)