To provide a light-emitting-element structure which can be integrated at high density and whose production yield is high.
In a structure which is provided, a first clad layer 103, a first- conductivity-type active layer 104 and a second clad layer 105 are formed on a first multilayer reflection layer 102, and a second multilayer reflection layer 106 is formed on them. In a semiconductor substrate 100, the energy band gap of the multilayer reflection layers 102, 106 and that of the clad layers 103, 105 are larger than the energy band gap of the active layer 104. A second- conductivity diffusion region 110 is formed selectively on the semiconductor substrate 100. A second-conductivity electrode 102 which comes into contact with the second-conductivity diffusion region 110 is formed. A first-conductivity electrode 109 which comes into contact with a first-conductivity substrate 101 is formed on the rear side of the substrate 101. As a result, a surface light emitting element of a planar structure which comprises a p-n junction to be used as a light emitting source can be formed inside the active layer 104. Since a mesa etching groove does not exist, a light emitting element can be integrated at high density, and a defect in a photolighographic process can be reduced.
NAKAMURA YUKIO
HAMANO HIROSHI
YANAKA MASUMI
Next Patent: SEMICONDUCTOR LIGHT EMITTING ELEMENT