Title:
SEMICONDUCTOR LIGHT-EMITTING DEVICE
Document Type and Number:
Japanese Patent JP2022032541
Kind Code:
A
Abstract:
To provide a semiconductor light-emitting device having high luminous efficiency.SOLUTION: A semiconductor light-emitting device includes a first conductive type first semiconductor layer, a second conductive type second semiconductor layer and a luminescent layer formed between the first semiconductor layer and the second semiconductor layer. The luminescent layer includes a quantum well layer and an a barrier layer adjacent to the quantum well layer. The quantum well layer includes a material of a grating constant larger than a grating constant of a material of the first semiconductor layer. The barrier layer includes a first region and a second region and the second region is formed between the quantum well layer and the first region. The first region of the barrier layer includes a material having a band gap wider than that of a material of the quantum well layer and a grating constant smaller than a grating constant of the material of the first semiconductor layer. The second region of the barrier layer includes a material having a band gap wider than that of the material of the first region.SELECTED DRAWING: Figure 1
Inventors:
SUGAWARA HIDETO
Application Number:
JP2020136406A
Publication Date:
February 25, 2022
Filing Date:
August 12, 2020
Export Citation:
Assignee:
TOSHIBA CORP
TOSHIBA ELECTRONIC DEVICES & STORAGE CORP
TOSHIBA ELECTRONIC DEVICES & STORAGE CORP
International Classes:
H01L33/30
Domestic Patent References:
| JP2020102494A | 2020-07-02 | |||
| JP2019204951A | 2019-11-28 | |||
| JP2007201040A | 2007-08-09 | |||
| JPH0563290A | 1993-03-12 |
Attorney, Agent or Firm:
Hyuga Temple Masahiko
Junichi Kozaki
Hiroshi Ichikawa
Satoshi Shirai
Uchida Keito
Takeuchi Isao
Junichi Kozaki
Hiroshi Ichikawa
Satoshi Shirai
Uchida Keito
Takeuchi Isao