Title:
SEMICONDUCTOR LIGHT EMITTING DEVICE
Document Type and Number:
Japanese Patent JP3222652
Kind Code:
B2
Abstract:
PURPOSE: To provide a semiconductor laser made of a wide gap II-IV compound semiconductor which makes it possible to embody current construction structure and lower working voltage and provide high reliability and high light emission efficiency.
CONSTITUTION: A semiconductor laser comprises a double heterostructure unit with buffer layers 12 to 15, which include In or Ga which has formed a growth on a p-GaAs substrate 11 and a p-Z buffer layer 16 laminated and formed on the buffer layers 12 to 15 and an undoped CdZnSe multiple quantum well active layer 18 and an n-ZnSSe clad layer 20. On a part of the surface of the substrate is formed a surface slanted by 15° in the direction to [011] from a plane (100). The concentration of carriers of the p clad layer 16 on the slanted surface is arranged to be larger than that of the p clad layer 16 on the surface (100).
Inventors:
Yukie Nishikawa
Masayuki Ishikawa
Shinji Saito
Masayuki Ishikawa
Shinji Saito
Application Number:
JP22536293A
Publication Date:
October 29, 2001
Filing Date:
September 10, 1993
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L33/06; H01L33/12; H01L33/14; H01L33/16; H01L33/28; H01L33/30; H01L33/40; H01S5/00; H01S5/327; (IPC1-7): H01S5/327; H01L33/00
Domestic Patent References:
| JP5218565A | ||||
| JP5275803A | ||||
| JP1184972A | ||||
| JP774424A | ||||
| JP57049A | ||||
| JP3280483A | ||||
| JP2220488A |
Other References:
Ｊ．Ｃｒｙｓｔ．Ｇｒｏｗｔｈ １０７［１−４］（１９９１）ｐ．７７２−７７８
Ｊ．Ｃｒｙｓｔ．Ｇｒｏｗｔｈ １１３［１／２］（１９９１）ｐ．１２７−１３０
Ｊ．Ｃｒｙｓｔ．Ｇｒｏｗｔｈ １１３［１／２］（１９９１）ｐ．１２７−１３０
Attorney, Agent or Firm:
Takehiko Suzue
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