Title:
半導体発光素子
Document Type and Number:
Japanese Patent JP5038382
Kind Code:
B2
Abstract:
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.
Inventors:
Lee Dong Ritsu
Park
Sleep
Zhao Zhou
Zhao Chang
Gold heaven
Gradually rising
Chung Ming Nyu
Kim Dong Shun
Park
Sleep
Zhao Zhou
Zhao Chang
Gold heaven
Gradually rising
Chung Ming Nyu
Kim Dong Shun
Application Number:
JP2009275244A
Publication Date:
October 03, 2012
Filing Date:
December 03, 2009
Export Citation:
Assignee:
Rensselaer Polytechnic Institute
International Classes:
H01L33/02
Domestic Patent References:
| JP2007165284A | ||||
| JP2003168823A |
Other References:
Min-Ki Kwon et al.,Surface-Plasmon-Enhanced Light-Emitting Diodes,Advanced Materials,2008年 3月 7日,Vol.20,p1253-1257
Dong-Ming Yeh et al.,Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode,Applied Physics Letters,2007年10月23日,Vol.91,p.171103
Dong-Ming Yeh et al.,Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode,Applied Physics Letters,2007年10月23日,Vol.91,p.171103
Attorney, Agent or Firm:
Hidekazu Miyoshi
Masakazu Ito
Masakazu Ito