To provide a semiconductor light emitting element having an electrode improved in junction and anticorrosion, and also to provide a method for manufacturing the element, and a lamp.
The semiconductor light emitting element is equipped with: a substrate; a laminated semiconductor layer including a light emitting layer formed over the substrate, one electrode 111 formed over the upper face of the laminated semiconductor layer; and the other electrode formed over the semiconductor layer exposing face, from which the laminated semiconductor layer is partially cut off. The one electrode 111 includes a junction layer 110 and a bonding pad electrode 120 formed to cover the junction layer 110. The bonding pad electrode 120 has a maximum thickness larger than the maximum thickness of the junction layer 110, and is composed of one or two or more layers. Inclined slopes 110c, 117c and 119c, which are made gradually thinner toward the outer circumference, are formed in the outer circumference portions 110d and 120d of the junction layer 110 and the bonding pad electrode 120. Thus, the problem is solved by using the semiconductor light emitting element.
| WO/2009/086808 | OPTO-ELECTRONIC COMPONENT |
| JP3136672 | GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT |
| JP2001156334 | LED ARRAY |
OKABE TAKEHIKO
| JP2005209733A | 2005-08-04 | |||
| JP2005045038A | 2005-02-17 | |||
| JPH11340506A | 1999-12-10 | |||
| JPH10107318A | 1998-04-24 | |||
| JP2008041866A | 2008-02-21 | |||
| JP2006066903A | 2006-03-09 | |||
| JP2004006498A | 2004-01-08 | |||
| JP2004260178A | 2004-09-16 | |||
| JPH04111422A | 1992-04-13 |
Tadashi Takahashi
Takashi Watanabe
Suzuki Mitsuyoshi
Kazuya Nishi
Yasuhiko Murayama
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