Title:
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3490903
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element, using porous silicon(PS) whose luminous efficiency is improved without accompanying unnecessarily increased series resistance.
SOLUTION: A semiconductor light-emitting element has at least a first conductivity-type nanostructure PS layer 12 whose thickness is controlled, and a second conductivity-type nanostructure PS layer 61 and a first conductivity- type mesostructure PS layer 13 which are arranged on both sides of the layer 12 and in contact with it. Since the first conductivity-type nanostructure PS layer 12 is formed through oxidation of non-degenerate crystalline silicon whose thickness has been set beforehand, the thickness with which the maximum luminous efficiency can be obtained is accurately controlled.
Inventors:
Kousuke Nishimura
Yasuyuki Nagao
Yasuyuki Nagao
Application Number:
JP25566798A
Publication Date:
January 26, 2004
Filing Date:
September 09, 1998
Export Citation:
Assignee:
KDDI CORPORATION
International Classes:
H05B33/10; G09F9/33; H01L27/15; H01L33/08; H01L33/34; H01L33/40; H05B33/12; H05B33/14; (IPC1-7): H01L33/00; H05B33/10; H05B33/14
Domestic Patent References:
| JP697500A | ||||
| JP7288337A | ||||
| JP6310816A | ||||
| JP677102A | ||||
| JP8139359A | ||||
| JP10135500A | ||||
| JP10269932A | ||||
| JP5571081A | ||||
| JP6163982A | ||||
| JP697419A | ||||
| JP5327017A | ||||
| JP9506211A | ||||
| JP5502978A | ||||
| JP6509685A |
Other References:
【文献】第44回応用物理関連連合講演会予稿集,1997年,No.2,p.806 31a-B-6
Attorney, Agent or Firm:
Kazuki Tanaka (2 outside)
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