Title:
SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3776538
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which has a low forward voltage which is lowered by reducing the contact resistance between a p-type layer made of a gallium nitride compound semiconductor and a p-side electrode by improving the electrical connection between the layer and electrode and a method for manufacturing the element.
SOLUTION: A semiconductor light emitting element is composed of a substrate 1, a layered semiconductor section which is formed as a light emitting layer by forming a p-type layer 5 upon an n-type layer 3 made of gallium nitride compound semiconductor and formed on the substrate 1, and a p-side electrode 8 provided on the p-type layer 5 with a current diffusing layer 7 in between and the layer 7 has a low-resistance layer 7a composed of a droplet layer or thin film of at least one kind of metal selected from among In, Ga, and Al or composed of a gallium nitride compound semiconductor containing at least one kind of metal selected from among In, Zn, and Mg at a concentration higher than that of impurities contained in the p-type layer 5 on the p-type layer 5 side.
Inventors:
Takeshi Tsutsui
Shunji Nakata
Yukio Shakuda
Masayuki Sonobe
Norikazu Ito
Shunji Nakata
Yukio Shakuda
Masayuki Sonobe
Norikazu Ito
Application Number:
JP34294296A
Publication Date:
May 17, 2006
Filing Date:
December 24, 1996
Export Citation:
Assignee:
ROHM Co., Ltd.
International Classes:
H01L33/14; H01L33/20; H01L33/32; H01L33/36; (IPC1-7): H01L33/00
Domestic Patent References:
| JP7106633A | ||||
| JP8097471A | ||||
| JP8115880A | ||||
| JP10070082A | ||||
| JP9036421A |
Attorney, Agent or Firm:
Kawamura Taku