PURPOSE: To obtain a uniform semiconductor light emitting element having high luminance with high reproducibility by specifying Si concentration in a p-type GaAs substrate.
CONSTITUTION: Since a quartz boat (SiO2) is, when a Zn-doped GaAs single crystal is formed by a boat growing method, used, Si is always mixed with the crystal. Accordingly, the Si concentration mixed at this time is controlled. since a decrease in luminance becomes remarkable when the concentration is 1×1016cm-3 or less and 1×1018cm-3 or more, the concentration is so reduced to 7-(certain degree at the stage of manufacturing the crystal as tap fall within a specified value, the crystal is manufactured, then a p-type GaAs substrate having a range of 1×1016cm-3 to 1×1018cm-3 of the concentration of the Si contained in the substrate is selected. and p-type, n-type GaAlAs layers are epitaxially grown. Thus, an epitaxial wafer for a light emitting diode always having luminance of the same level can be manufactured with high reproducibility.
MIZUNIWA SEIJI
SHIBATA YUKIYA
