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Title:
SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP2015028984
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which inhibits a change in light distribution characteristics caused by an angle of inclination of a lateral face.SOLUTION: A semiconductor light emitting element according to the present embodiment comprises: a semiconductor structure having a light extraction surface as a top face; a reflection film provided on a lateral face of the semiconductor structure; and a positive electrode and a negative electrode, which are provided on an undersurface of the semiconductor structure. In particular, the lateral face of the semiconductor structure inclines so as to extend from the undersurface toward the top face and at least one region of the lateral face has at least either of a plurality of salients or a plurality of recesses.

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Inventors:
KIUCHI AKIYOSHI
HIROSE RYOHEI
NOGAMI HIROFUMI
Application Number:
JP2013157541A
Publication Date:
February 12, 2015
Filing Date:
July 30, 2013
Export Citation:
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Assignee:
NICHIA KAGAKU KOGYO KK
International Classes:
H01L33/22; H01L33/46
Domestic Patent References:
JP2011134829A2011-07-07
JP2012182276A2012-09-20
JP2009164506A2009-07-23
JP2012227512A2012-11-15
JP2009537982A2009-10-29
Foreign References:
WO2013033152A12013-03-07



 
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