Title:
SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP3309394
Kind Code:
B2
Abstract:
PURPOSE: To facilitate a crystal growth and a process and to improve yield by increasing an injecting efficiency of carrier only to an active layer by using a quantum well structure semiconductor layer.
CONSTITUTION: An active layer 5 and a semiconductor thin film made of n-type InP clad layers 20, 60 disposed at both sides of the layer 5, are laminated on an n-type InP semiconductor substrate 10. A quantum well structure tunnel region layer 30 having a larger forbidden band than that of the layer 5, a barrier layer of semiconductor of a reduced thickness of the degree of exhibiting a tunnel effect, and energy of a base quantum level higher than that of the layer 5 and lower than that of the layers 20, 60, is used at least at one of the layers 5. The layers 20, 60 having higher energy than the quantum level, has extremely small tunneling probability of electrons due to reflection of electron wave even if an energy difference is small. Accordingly, most of the current can be injected to the layer 5 to increase the injecting efficiency of the carrier only to the layer 5, and a crystal growth, a process, and yield can be improved.
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Inventors:
Shinji Takano
Application Number:
JP40028790A
Publication Date:
July 29, 2002
Filing Date:
December 04, 1990
Export Citation:
Assignee:
NEC
International Classes:
H01L33/06; H01L33/10; H01L33/14; H01L33/30; H01S5/00; H01S5/34; (IPC1-7): H01L33/00; H01S5/34
Domestic Patent References:
| JP61184595A | ||||
| JP6464284A | ||||
| JP1298786A | ||||
| JP2228088A | ||||
| JP63152194A | ||||
| JP63263786A | ||||
| JP1101684A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)