SEMICONDUCTOR LIGHT EMITTING ELEMENT

Japanese Patent JPH0316278

A

PURPOSE:To realize a large refraction factor against light of a specified wavelength and to acquire a light emitting element of high external quantum efficiency by providing a multilayer reflection film which is formed by laminating thin films having two or more different refractance factors regularly. CONSTITUTION:A hetero junction layer 3 is a quantum well structure which is a combination of 18 pairs of a thick film substrate 1, a buffer layer 2, a clad layer 4, a well layer and a barrier layer, respectively. A multilayer reflection film 5 having a proper film thickness and refraction factor is composed of a high refraction factor layer and a low refraction factor layer and is constituted by 16 pairs. A P-electrode 6 and an N-electrode 7 are separated by a moat and mesa section; a P-N junction of a mesa section is protected by an insulting film 8; and a reflection preventing film is also provided. Since the reflection preventing film is thus provided to a surface of a light projecting side, light output efficiency is further improved, thereby preventing reflection at a light projecting side. An external quantum efficiency can be improved as much as about three times and a highly efficient light emitting diode can be acquired in this way.

HANEDA MAKOTO
KONO TOSHIHIRO
TSUJI SHINJI
ONO YUICHI
AIKI KUNIO

JP14959089A

January 24, 1991

June 14, 1989

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HITACHI LTD

H01L33/06; H01L33/10; H01L33/12; H01L33/14; H01L33/20; H01L33/28; H01L33/30; H01L33/34; H01L33/40; H01L33/46; (IPC1-7): H01L33/00

JPS6098689A	1985-06-01
JPS6134983A	1986-02-19
JPS6386580A	1988-04-16
JPS62291192A	1987-12-17

Akio Takahashi

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