Title:
SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
Japanese Patent JPH04100280
Kind Code:
A
Abstract:
PURPOSE:To obtain a semiconductor light emitting element whose light leading- out efficiency is high, by constituting a light leading-out region as a region which is formed on a clad layer and has high carrier concentration. CONSTITUTION:The title element is constituted of the following; an n-GaAs substrate 101, an n-GaAs buffer layer 102, an n-InGaAlP clad layer 103, an InGaAlP clad layer 104, an InGaAlP clad layer 105, a p-GaAs contact layer 106, an n-side electrode 107, a p-side electrode 108, a high concentration region 109 of p-type impurities, and a light emitting region 110. A current injected from the electrode 108 passes the high concentration region 109 and flows into the clad layer 105. The hetero barrier between the p-GaAs contact layer 106 and the p-InGaAlP clad layer 105 is large, and the current is hard to flow, so that the light emitting region 110 is formed so as to be shifted from the region just under the contact layer 106 being a light absorbing layer, and the light from the light emitting region 110 is not shielded by the contact layer 106. As the result, the light from the light emitting region of the double hetero structure active layer can be led out without being shielded by the contact layer, thereby obtaining a semiconductor light emitting element whose light leading-out efficiency is high.
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Inventors:
NITTA KOICHI
SUGAWARA HIDETO
ISHIKAWA MASAYUKI
HATAGOSHI GENICHI
SUGAWARA HIDETO
ISHIKAWA MASAYUKI
HATAGOSHI GENICHI
Application Number:
JP21708590A
Publication Date:
April 02, 1992
Filing Date:
August 20, 1990
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L33/08; H01L33/14; H01L33/30; H01L33/36; (IPC1-7): H01L33/00
Attorney, Agent or Firm:
Hideaki Togawa