Title:
SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
Japanese Patent JPH05343735
Kind Code:
A
Abstract:
PURPOSE:To obtain a semiconductor element to be formed on an amorphous substrate having a large area with a low cost by forming a polycrystal on the substrate made of a material in which an epitaxial growth does not occur. CONSTITUTION:A first crystalline growth is conducted on a quartz glass plate 1 as a board. As a result, grains 2a made of p-type AlGaAs are grown on the glass 1. A p-type polycrystalline AlGaAs layer 2 having the same composition as that of the grains and an n-type polycrystalline AlGaAs layer 3 are grown subsequently to the first growth. A polycrystalline AlGaAs layer can be obtained by the growths of the two stages. Particularly, the second growth is to obtain the layer 2 or the layer 3 having desirable characteristics. Then, a mesa structure 4 is formed by chemically etching, and a p-type electrode 5 and an n-type electrode 6 are formed partly at the etched surface and the structure 4.
Inventors:
NAGATA HISAO
TANAKA SHUHEI
TANAKA SHUHEI
Application Number:
JP156993A
Publication Date:
December 24, 1993
Filing Date:
January 08, 1993
Export Citation:
Assignee:
NIPPON SHEET GLASS CO LTD
International Classes:
H01L33/08; H01L33/16; H01L33/20; H01L33/28; H01L33/30; H01L33/40; (IPC1-7): H01L33/00
Attorney, Agent or Firm:
Takayoshi Matsunaga