To provide a light emitting element excellent in electric characteristics with a high light emission efficiency without degrading film quality of a window layer, relating to a semiconductor light emitting element wherein a light emitting element is formed of an AlGaInp based compound semiconductor, with GaP used as a window layer.
The semiconductor light emitting element comprises a substrate 1, a light emitting layer formation part 11 wherein, comprising AlGaInP based compound semiconductor, an n-type layer and a p-type layer are laminated to form a light emitting layer on the substrate 1, and a window layer 7 of GaP provided on the surface side of the light emitting layer formation part 11. Between the light emitting layer formation part 11 and the window layer 7, a buffer layer 6 of AlGaInP based compound semiconductor which relaxes the lattice strain between them is inserted.
NAKADA SHUNJI
MATSUMOTO YUKIO
