PURPOSE: To remove the main obstructive causes for the epitaxial growth due to an oxide film for the subject element by a method wherein a current stricting layer, having an inverted bias junction surface to be used for controlling a current path, is formed by a mixed crystal which will be hardly oxidized.
CONSTITUTION: A current stricting layer, consisting of a P-In0.4Ga0.51P, is formed on an N-GaAs substrate 1 as the first layer 21, then a current path 4 is formed by removing the first layer 21 in striped form performing a chemical etching. InGaP is stable when it is left in the air or used for the etching of the striped groove to be used as a current path, and no oxide film and the like are formed. The suitable mixture ratio for the Ga is 0.50∼0.52. InGaAs may be used instead of the InGaP. Through these procedures, no oxide film is formed on the current stricting layer when the element is picked out from a growing furnace system, and an excellent epitaxial growth can be performed.
MURATA KAZUHISA
YAMAMOTO SABUROU
HAYASHI HIROSHI
| JPS5391684A | 1978-08-11 |