PURPOSE: To control carrier-phonon mutual actions, to reduce lattice distortion during an operation and thereby to obtain a semiconductor light-emitting element of high reliability and high output, by setting the density of free carriers in a GaAs active layer to be a specified value or below.
CONSTITUTION: In a semiconductor light-emitting element having a structure wherein a light emission wavelength is controlled by impurities doped in a GaAs active layer, the density of free carriers in the active layer is set to be 4×1018cm-3 or below. When the quantity of doped impurities is larger than 4×1018cm-3 in this case, the density of free carriers may be set at 4×1018cm-3 or below by electric compensation. On the occasion of application of this invention, it is suitable that the semiconductor light-emitting element is a semiconductor laser having a double hetero structure of a GaAs/AlGaAs system. Thereby carrier-phonon mutual actions can be controlled, and as the result, lattice distortion which may occur during the operation of the light-emitting element can be reduced.
USHIKUBO TAKASHI
FURUKAWA RYOZO
KAWAHARA MASATO
Next Patent: LIGHT-EMITTING ELEMENT AND MANUFACTURE THEREOF