Title:
半導体受光素子、及びその製造方法
Document Type and Number:
Japanese Patent JP4009106
Kind Code:
B2
Abstract:
In a semiconductor photodetector 1 according to the present invention, flat surfaces of three steps with different heights are formed in a top surface portion of a semi-insulating GaAs substrate 2 . An n-type GaAs layer 3 , an i-type GaAs layer 4 , and a p-type GaAs layer 5 are successively deposited on the lower step surface formed in a central region of the semi-insulating GaAs substrate 2 . Furthermore, a p-side ohmic electrode 6 is provided astride and above a flat surface formed by the p-type GaAs layer 5 and the upper step surface of the semi-insulating GaAs substrate 2 , and an n-side ohmic electrode 7 is provided astride and above a flat surface formed by the n-type GaAs layer 3 and the middle step surface of the semi-insulating GaAs substrate 2.
Inventors:
Kazutoshi Nakajima
Application Number:
JP2001397959A
Publication Date:
November 14, 2007
Filing Date:
December 27, 2001
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H01L21/306; H01L31/10; H01L31/0224; H01L31/0352; H01L31/105
Domestic Patent References:
| JP2163979A | ||||
| JP11307805A | ||||
| JP2214160A | ||||
| JP7015026A | ||||
| JP63285971A | ||||
| JP61001026A | ||||
| JP62104178A | ||||
| JP62065851U |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Tatsuya Shioda
Shiro Terasaki
Tatsuya Shioda
Shiro Terasaki