Title:
SEMICONDUCTOR LIGHT RECEIVING ELEMENT
Document Type and Number:
Japanese Patent JP3688909
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a waveguide-type semiconductor light receiving element provided with high speed property, high efficiency and high output property.
SOLUTION: First to fifth semiconductor layers are formed on an insulating InP substrate 1. The first semiconductor layer 102 is an n-type whose polarity is inverse to that of the p-type third semiconductor layer 105. The value of BGE(band gap energy) of the first semiconductor layer 102 is set to be an intermediate one between BGE of the InP substrate 1 and BGE of the third semiconductor layer 105. The doping concentration of the second semiconductor layer 103 is set to be lower than that of the first and third semiconductor layers 102 and 105. BGE of the second semiconductor layer 103 is set to be larger than BGE of the first semiconductor layer 102. The fourth semiconductor layer 106 is set to be the p-type and BGE is made larger than that of the first semiconductor layer 102. The fifth semiconductor layer 107 is set to be the p-type and BGE is made larger than that of the fourth semiconductor layer 106.
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Inventors:
Hiroshi Matsuoka
Yoshifumi Muramoto
Kato Kazutoshi
Tadao Ishibashi
Yoshifumi Muramoto
Kato Kazutoshi
Tadao Ishibashi
Application Number:
JP29027798A
Publication Date:
August 31, 2005
Filing Date:
October 13, 1998
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
H01L31/10; (IPC1-7): H01L31/10
Domestic Patent References:
| JP10233524A | ||||
| JP10223647A | ||||
| JP9275224A |
Foreign References:
| EP0793279B1 |
Attorney, Agent or Firm:
Yoshihiko Izumi
Shigeru Kobayashi
Shigeru Kobayashi