To provide a semiconductor manufacturing apparatus having an electrode component that is improved so that oxidation resistance may be raised.
This invention is related to an electrode component 11 for power supply that is used for the semiconductor manufacturing apparatus where a wafer is mounted on a susceptor 1 made of ceramics and the wafer is heated by heating the foregoing susceptor 1, and is also used for supplying power to the foregoing susceptor 1 from the outside. Regarding the electrode component 11 for power supply, its coefficient of thermal expansion is not less than 3.0×10-6/K and not more than 8.0×10-6/K for room temperature to 500°C, electrical conductivity in room temperature is no more than 10-3 Ωcm, and a weight increase caused by oxidation in an atmosphere at 500°C is not more than 0.1% per hour.
NAKADA HIROHIKO
HIIRAGIDAIRA HIROSHI
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
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