SEMICONDUCTOR MANUFACTURING METHOD

Title:

SEMICONDUCTOR MANUFACTURING METHOD

Document Type and Number:

Japanese Patent JP2016046480

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To provide an art relevant to a semiconductor device manufacturing method which can prevent breakage of a substrate and ensure solderability.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming an electrode having a first metal layer containing Ni on a surface of a semiconductor substrate and a protection layer which contains a metal other than Ni and covers a surface of first metal layer; an application process of applying a support plate on a surface of the electrode via an adhesive while heating the semiconductor substrate and the electrode at a temperature of equal to or lower than 280°C after the process of forming the electrode; and a process of polishing a rear face of the semiconductor substrate.SELECTED DRAWING: Figure 6

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Inventors:

KATO KUNIHITO
YOSHIDA TAICHI

Application Number:

JP2014171824A

Publication Date:

April 04, 2016

Filing Date:

August 26, 2014

Export Citation:

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Assignee:

TOYOTA MOTOR CORP

International Classes:

H01L21/28; H01L21/02; H01L21/265; H01L21/268; H01L21/304; H01L21/3205; H01L21/336; H01L21/768; H01L23/522; H01L23/532; H01L27/04; H01L29/739; H01L29/78

Attorney, Agent or Firm:

Kaiyu International Patent Office

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